Abstract
Raman scattering from single-crystal Si and Ge at 300°K was measured using an argon laser as the exciting source. The first-order Raman spectrum yields energies for the optical modes of 520.2±0.5 for Si and 300.7±0.5 for Ge. These values are in reasonable agreement with other determinations. The full widths at half-intensity were found to be 4.6 for Si and 5.3 for Ge. These values are compared with theoretical predictions. A Raman band was observed in Si at 950 which is attributed to second-order scattering and is compared with theoretical predictions.
- Received 30 September 1966
DOI:https://doi.org/10.1103/PhysRev.155.712
©1967 American Physical Society