Raman Scattering in 6H SiC

D. W. Feldman, James H. Parker, Jr., W. J. Choyke, and Lyle Patrick
Phys. Rev. 170, 698 – Published 15 June 1968
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Abstract

Fifteen phonon lines were observed in the first-order Raman spectrum of 6H SiC, using laser excitation. Polarized light was used to identify the mode symmetry, and a large-zone analysis was used to classify the modes and to display the results in what appear to be dispersion curves. All observed narrow lines are consistent with our interpretation, and only two of the expected lines remain unobserved. A study of the dependence of phonon energy on propagation direction shows that certain infrared and Raman active modes have extremely little infrared strength (a consequence of the polytype structure of 6H SiC). Doublets in the Raman spectrum give accurate measurements of the 4-8-cm1 discontinuities within the large zone.

  • Received 27 December 1967

DOI:https://doi.org/10.1103/PhysRev.170.698

©1968 American Physical Society

Authors & Affiliations

D. W. Feldman, James H. Parker, Jr., W. J. Choyke, and Lyle Patrick

  • Westinghouse Research Laboratories, Pittsburgh, Pennsylvania 15235

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Issue

Vol. 170, Iss. 3 — June 1968

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