Raman-scattering study of ion-implantation-produced damage in Cu2O

D. Powell, A. Compaan, J. R. Macdonald, and R. A. Forman
Phys. Rev. B 12, 20 – Published 1 July 1975
PDFExport Citation

Abstract

We present a Raman-scattering study of damage in Cu2O which we have implanted with 90- and 180-keV Cd ions with doses ranging from 1.5 ×1011 to 1.5×1015 cm2. The Raman scattering was performed prior to annealing in order to study primarily the implantation-produced lattice damage. Using two argon-laser lines close to resonance with the 1S blue exciton, we observe changes from the pure-crystal Raman spectrum at all implantation doses. The unusual sensitivity of the technique can be interpreted in terms of damage-induced broadening of the intrinsic exciton states.

  • Received 6 January 1975

DOI:https://doi.org/10.1103/PhysRevB.12.20

©1975 American Physical Society

Authors & Affiliations

D. Powell*, A. Compaan, and J. R. Macdonald

  • Department of Physics, Kansas State University, Manhattan, Kansas 66506

R. A. Forman

  • National Bureau of Standards, Washington, D. C. 20013

  • *Present address: Department of Physics, University of Oklahoma, Norman, Okla. 73069.

References (Subscription Required)

Click to Expand
Issue

Vol. 12, Iss. 1 — 1 July 1975

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×