Electronic structure of MoSe2, MoS2, and WSe2. I. Band-structure calculations and photoelectron spectroscopy

R. Coehoorn, C. Haas, J. Dijkstra, C. J. F. Flipse, R. A. de Groot, and A. Wold
Phys. Rev. B 35, 6195 – Published 15 April 1987
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Abstract

The band structures of the semiconducting layered compounds MoSe2, MoS2, and WSe2 have been calculated self-consistently with the augmented-spherical-wave method. Angle-resolved photoelec- tron spectroscopy of MoSe2 using He i, He ii, and Ne i radiation, and photon-energy-dependent normal-emission photoelectron spectroscopy using synchrotron radiation, show that the calculational results give a good description of the valence-band structure. At about 1 eV below the top of the valence band a dispersionless state was measured, almost completely of Mo 4d character. Such a state, which is not predicted by band-structure calculations, has also been observed in metallic layered compounds. Suggestions are given for the explanation of this phenomenon.

  • Received 20 October 1986

DOI:https://doi.org/10.1103/PhysRevB.35.6195

©1987 American Physical Society

Authors & Affiliations

R. Coehoorn, C. Haas, J. Dijkstra, and C. J. F. Flipse

  • Laboratories of Physical and Inorganic Chemistry, Materials Science Centre of the University of Groningen, Nijenborgh 16, 9747 AG Groningen, The Netherlands

R. A. de Groot

  • Research Institute for Materials, Faculty of Science, University of Nijmegen, Toernooiveld, 6515 ED Nijmegen, The Netherlands

A. Wold

  • Department of Chemistry, Brown University, Providence, Rhode Island, 02918

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Vol. 35, Iss. 12 — 15 April 1987

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