Abstract
The temperature dependence of the electron mobility in a high-mobility As/GaAs heterojunction is theoretically investigated in the temperature range 4–40 K and in the electron-density range (0.3–6)× by considering acoustic-phonon scattering. In agreement with recent experimental results, we find that the linear coefficient of the temperature dependence has a shallow minimum as a function of electron density. Our theoretical results support the claim of an enhanced value for the deformation-potential coupling in these systems, but not for the piezoelectric coupling.
- Received 25 April 1990
DOI:https://doi.org/10.1103/PhysRevB.42.3725
©1990 American Physical Society