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Surface oxidation effects on the optical properties of silicon nanocrystals

Igor Vasiliev, James R. Chelikowsky, and Richard M. Martin
Phys. Rev. B 65, 121302(R) – Published 1 March 2002
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Abstract

We report first-principles calculations for optical absorption spectra of hydrogenated silicon clusters in the presence of oxygen on the surface. Our computational technique is based on linear-response theory within the time-dependent local-density approximation (TDLDA). The calculated spectra show that oxidation substantially reduces the size of optical gaps in silicon nanocrystals. This result may explain a seeming disagreement between the measured photoluminescence and theoretical predictions based on a quantum confinement model in the limit of small clusters.

  • Received 22 August 2001

DOI:https://doi.org/10.1103/PhysRevB.65.121302

©2002 American Physical Society

Authors & Affiliations

Igor Vasiliev1, James R. Chelikowsky2, and Richard M. Martin1

  • 1Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
  • 2Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455

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Vol. 65, Iss. 12 — 15 March 2002

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