Role of the interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2

N. Daldosso, M. Luppi, S. Ossicini, E. Degoli, R. Magri, G. Dalba, P. Fornasini, R. Grisenti, F. Rocca, L. Pavesi, S. Boninelli, F. Priolo, C. Spinella, and F. Iacona
Phys. Rev. B 68, 085327 – Published 29 August 2003
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Abstract

Light-emitting silicon nanocrystals embedded in SiO2 have been investigated by x-ray absorption measurements in total electron and photoluminescence yields, by energy filtered transmission electron microscopy and by ab initio total energy calculations. Both experimental and theoretical results show that the interface between the silicon nanocrystals and the surrounding SiO2 is not sharp: an intermediate region of amorphous nature and variable composition links the crystalline Si with the amorphous stoichiometric SiO2. This region plays an active role in the light-emission process.

  • Received 30 May 2003

DOI:https://doi.org/10.1103/PhysRevB.68.085327

©2003 American Physical Society

Authors & Affiliations

N. Daldosso1, M. Luppi2,*, S. Ossicini3, E. Degoli3, R. Magri2, G. Dalba1, P. Fornasini1, R. Grisenti1, F. Rocca4, L. Pavesi1, S. Boninelli5, F. Priolo5, C. Spinella6, and F. Iacona6

  • 1INFM and Dipartimento di Fisica, Università di Trento, I-38050 Povo (Trento), Italy
  • 2INFM-S3 and Dipartimento di Fisica, Università di Modena e Reggio Emilia, I-41100 Modena, Italy
  • 3INFM-S3 and Dipartimento di Scienze e Metodi dell’Ingegneria, Università di Modena e Reggio Emilia, I-42100 Reggio Emilia, Italy
  • 4CNR-IFN, Istituto di Fotonica e Nanotecnologie del Consiglio Nazionale delle Ricerche, Sezione “CeFSA” di Trento, I-38050 Povo (Trento), Italy
  • 5MATIS-INFM and Dipartimento di Fisica e Astronomia, Università di Catania, I-95123 Catania, Italy
  • 6CNR-IMM, Sezione di Catania, I-95121 Catania, Italy

  • *E-mail address: luppim@unimo.it, luppi@few.vu.nl

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Vol. 68, Iss. 8 — 15 August 2003

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