Vapor phase grown ZnO samples treated with hydrogen and∕or deuterium plasma were studied by means of photoconductivity and infrared (IR) absorption spectroscopy. Three bands at 180, 240, and $310{\mathrm{cm}}^{-1}$ were observed in the photoconductivity spectra of hydrogenated ZnO. These are identified as electronic transitions of three independent hydrogen-related shallow donors. Two electronic transitions from the $\mathrm{H}\text{‐}\mathrm{I}$ defect previously associated with the bond-centered hydrogen [E. V. Lavrov et al., Phys. Rev. B 66, 165205 (2002)] were found in IR absorption spectra at 1430 and $1480{\mathrm{cm}}^{-1}$. Based on the energies of these transitions $\mathrm{H}\text{‐}\mathrm{I}$ was ruled out as a candidate for the hydrogen-related shallow donor in ZnO.

• Received 26 April 2005

DOI:https://doi.org/10.1103/PhysRevB.72.085212