Silicon nanocrystallites in a SiO2 matrix: Role of disorder and size

Roberto Guerra, Ivan Marri, Rita Magri, Layla Martin-Samos, Olivia Pulci, Elena Degoli, and Stefano Ossicini
Phys. Rev. B 79, 155320 – Published 27 April 2009

Abstract

We compare, through first-principles pseudopotential calculations, the structural, electronic, and optical properties of different size silicon nanoclusters embedded in a SiO2 crystalline or amorphous matrix with that of freestanding, hydrogenated, and hydroxided silicon nanoclusters of corresponding size and shape. We find that the largest effect on the optoelectronic behavior is due to the amorphization of the embedded nanocluster. In that, the amorphization reduces the fundamental gap while increasing the absorption strength in the visible range. Increasing the nanocluster size does not change substantially this picture but only leads to the reduction in the absorption threshold, following the quantum confinement rule. Finally, through the calculation of the optical absorption spectra both in an independent-particle and a many-body approach, we show that the effect of local fields is crucial for describing properly the optical behavior of the crystalline case while it is of minor importance for amorphous systems.

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  • Received 27 November 2008

DOI:https://doi.org/10.1103/PhysRevB.79.155320

©2009 American Physical Society

Authors & Affiliations

Roberto Guerra, Ivan Marri, Rita Magri, and Layla Martin-Samos

  • Dipartimento di Fisica and CNR-INFM-S3, Università di Modena e Reggio Emilia, via Campi 213/A, I-41100 Modena, Italy

Olivia Pulci

  • Department of Physics, European Theoretical Spectroscopy Facility (ETSF) and CNR-INFM, Universitá di Roma “Tor Vergata,” Via della Ricerca Scientifica 1, I-00133 Roma, Italy

Elena Degoli and Stefano Ossicini

  • Dipartimento di Scienze e Metodi dell’Ingegneria and CNR-INFM-S3, Università di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia, Italy

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Issue

Vol. 79, Iss. 15 — 15 April 2009

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