Polaronic hole localization and multiple hole binding of acceptors in oxide wide-gap semiconductors

Stephan Lany and Alex Zunger
Phys. Rev. B 80, 085202 – Published 14 August 2009

Abstract

Acceptor-bound holes in oxides often localize asymmetrically at one out of several equivalent oxygen ligands. Whereas Hartree-Fock (HF) theory overly favors such symmetry-broken polaronic hole localization in oxides, standard local-density (LD) calculations suffer from spurious delocalization among several oxygen sites. These opposite biases originate from the opposite curvatures of the energy as a function of the fractional occupation number n, i.e., d2E/dn2<0 in HF and d2E/dn2>0 in LD. We recover the correct linear behavior, d2E/dn2=0, that removes the (de)localization bias by formulating a generalized Koopmans condition. The correct description of oxygen hole localization reveals that the cation-site nominal single acceptors in ZnO, In2O3, and SnO2 can bind multiple holes.

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  • Received 17 February 2009

DOI:https://doi.org/10.1103/PhysRevB.80.085202

©2009 American Physical Society

Authors & Affiliations

Stephan Lany and Alex Zunger

  • National Renewable Energy Laboratory, Golden, Colorado 80401, USA

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Issue

Vol. 80, Iss. 8 — 15 August 2009

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