Evidence of quantum confinement effects on interband optical transitions in Si nanocrystals

M. I. Alonso, I. C. Marcus, M. Garriga, A. R. Goñi, J. Jedrzejewski, and I. Balberg
Phys. Rev. B 82, 045302 – Published 1 July 2010

Abstract

We present evidence for quantum confinement effects on optical transitions in ensembles of Si nanocrystals (NCs) in a SiO2 matrix by considering simultaneously the dielectric function dispersions obtained by spectroscopic ellipsometry, the absorption edge, and the photoluminescence. We find that all these quantities blueshift in a similar manner with decreasing size of the NCs for diameters d below 6 nm. The correlated behaviors of the three observed optical transitions, the optical gap EG, and the critical points E1 and E2, indicate conclusively that their measured blueshifts are associated with the same quantum confinement effect and that the “entire” band structure shifts with d. In addition, our results show that the features of the band structure of Si NCs in the d>4nm range are qualitatively similar to those of bulk Si. In particular, the indirectlike nature of the band gap and the criticality of the L and X points of the bulk Brillouin zone are retained, on the understanding that these concepts cannot be strict in nanocrystals of small dimensions.

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  • Received 31 March 2010

DOI:https://doi.org/10.1103/PhysRevB.82.045302

©2010 American Physical Society

Authors & Affiliations

M. I. Alonso*, I. C. Marcus, M. Garriga, and A. R. Goñi

  • Institut de Ciència de Materials de Barcelona, CSIC, Esfera UAB, 08193 Bellaterra, Spain

J. Jedrzejewski and I. Balberg

  • The Racah Institute of Physics, The Hebrew University of Jerusalem, Jerusalem 91904, Israel

  • *isabel.alonso@icmab.es

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Issue

Vol. 82, Iss. 4 — 15 July 2010

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