Intrinsic Ferromagnetism in the Diluted Magnetic Semiconductor $\mathrm{Co}:{\mathrm{TiO}}_{2}$

Intrinsic Ferromagnetism in the Diluted Magnetic Semiconductor $Co : {TiO}_{2}$

H. Saadaoui, X. Luo, Z. Salman, X. Y. Cui, N. N. Bao, P. Bao, R. K. Zheng, L. T. Tseng, Y. H. Du, T. Prokscha, A. Suter, T. Liu, Y. R. Wang, S. Li, J. Ding, S. P. Ringer, E. Morenzoni, and J. B. Yi

Phys. Rev. Lett. 117, 227202 – Published 23 November 2016

Abstract

Here we present a study of magnetism in ${Co}_{0.05} {Ti}_{0.95} O_{2 - δ}$ anatase films grown by pulsed laser deposition under a variety of oxygen partial pressures and deposition rates. Energy-dispersive spectrometry and transmission electron microscopy analyses indicate that a high deposition rate leads to a homogeneous microstructure, while a very low rate or postannealing results in cobalt clustering. Depth resolved low-energy muon spin rotation experiments show that films grown at a low oxygen partial pressure ( $\approx 10^{- 6} torr$ ) with a uniform structure are fully magnetic, indicating intrinsic ferromagnetism. First principles calculations identify the beneficial role of low oxygen partial pressure in the realization of uniform carrier-mediated ferromagnetism. This work demonstrates that $Co : {TiO}_{2}$ is an intrinsic diluted magnetic semiconductor.

Received 16 March 2016

DOI:https://doi.org/10.1103/PhysRevLett.117.227202

Physics Subject Headings (PhySH)

Ferromagnetism First-principles calculations

Electronic structure Laser ablation Liquid helium cooling Magnetization measurements Muon spin relaxation & rotation

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

H. Saadaoui¹, X. Luo², Z. Salman¹, X. Y. Cui³, N. N. Bao⁴, P. Bao⁵, R. K. Zheng⁵, L. T. Tseng², Y. H. Du⁶, T. Prokscha¹, A. Suter¹, T. Liu⁷, Y. R. Wang², S. Li², J. Ding⁴, S. P. Ringer^3,8, E. Morenzoni^1,*, and J. B. Yi^2,†

¹Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, 5232 Villigen PSI, Switzerland
²School of Materials Science and Engineering, UNSW, Sydney, New South Wales 2052, Australia
³School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, New South Wales 2006, Australia
⁴Department of Materials Science and Engineering, National University of Singapore, 119260, Singapore
⁵School of Physics, The University of Sydney, Sydney, New South Wales 2006, Australia
⁶Institute of Chemical and Engineering Science, Agency for Science, Technology and Research (A*STAR), 1 Pesek Road, Jurong Island, 627833, Singapore
⁷ANKA, Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen, Germany
⁸The Australian Institute for Nanoscale Science and Technology, The University of Sydney, Sydney, New South Wales 2006, Australia

^*elvezio.morenzoni@psi.ch
^†jiabao.yi@unsw.edu.au

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Vol. 117, Iss. 22 — 25 November 2016

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Physical Review Letters

Intrinsic Ferromagnetism in the Diluted Magnetic Semiconductor Co:TiO2

H. Saadaoui, X. Luo, Z. Salman, X. Y. Cui, N. N. Bao, P. Bao, R. K. Zheng, L. T. Tseng, Y. H. Du, T. Prokscha, A. Suter, T. Liu, Y. R. Wang, S. Li, J. Ding, S. P. Ringer, E. Morenzoni, and J. B. Yi

Phys. Rev. Lett. 117, 227202 – Published 23 November 2016

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Intrinsic Ferromagnetism in the Diluted Magnetic Semiconductor $Co : {TiO}_{2}$