Influence of Quantum Confinement on the Critical Points of the Band Structure of Si

M. Ben-Chorin; B. Averboukh; D. Kovalev; G. Polisski; F. Koch

doi:10.1103/PhysRevLett.77.763

Influence of Quantum Confinement on the Critical Points of the Band Structure of Si

M. Ben-Chorin, B. Averboukh, D. Kovalev, G. Polisski, and F. Koch

Phys. Rev. Lett. 77, 763 – Published 22 July 1996

Abstract

The photoluminescence excitation technique is used to monitor the absorption characteristics of Si nanocrystals. Contributions from different critical points are identified, and their shift with reduced size is deduced. The enhancement of the oscillator strength of the indirect optical transitions due to the confinement is estimated.