Abstract
Electron transport in an assembly of ZnO quantum dots has been studied using an electrochemically gated transistor. The electron mobility shows a stepwise increase as a function of the electron occupation per quantum dot. When the occupation number is below two, transport occurs by tunneling between the orbitals. Transport becomes 3 times faster when the occupation number is between two and eight; tunneling now occurs between the orbitals. Electron transport is thus critically determined by the quantum properties of the building blocks.
- Received 21 December 2001
DOI:https://doi.org/10.1103/PhysRevLett.89.036801
©2002 American Physical Society