Basic Laws of Electrical Breakdown of Thin Dielectric Layers
p.543
p.543
A New Model of Ionic and Electronic Processes during Anodic Oxidation of Valve Metals
p.553
p.553
Kinetic Electronic Phenomena in Metal Oxide Dielectric Films
p.563
p.563
Structure Inhomogeneities of the Oxide Dielectric and the Properties of Tantalum Capacitors
p.573
p.573
Preparation and Properties of Ultra Thin Anodic Valve Metal Oxide Films
p.581
p.581
Logarithmic Kinetics of the Ion Charge Accumulation in the SiO2 Dielectric Layers
p.591
p.591
A Surface Charge Approach to the Growth and Relaxation in Anodic Passive Films on Metals
p.601
p.601
Transient Ionic Space Charges in Thin Oxide Films: Determination of Thickness Distribution, Temperature, and Localized Phenomena
p.611
p.611
A New eletrochemical Technique for In Situ Measurement of Electric Resistance and Semiconductor Characteristics of Surface Films on Metals
p.621
p.621
Preparation and Properties of Ultra Thin Anodic Valve Metal Oxide Films
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 185-188)
Pages:
581-590
Citation:
Online since:
March 1995
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