Growth of 3C-SiC on Si(100) by LPCVD and Patterning of the Grown Layers
p.327
p.327
Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si Substrate
p.331
p.331
Evaluation of Carbonized Layers for 3C-SiC/Si Epitaxial Growth by Ellipsometry
p.335
p.335
In Situ Doping of 3C-SiC Grown on (0001) Sapphire Substrates by LPCVD
p.339
p.339
Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI
p.343
p.343
Study of Metamorphosing Top Si Layer of SOI Wafer into 3C-SiC Using Conventional Electric Furnace
p.347
p.347
Formation of Extremely Thin, Quasi-Single-Domain 3C-SiC Film on Resistively Heated On-Axis Si(001) Substrate Using Organo-Silane Buffer Layer
p.351
p.351
Electrical Characterization of SiC/Si Heterostructures with Modified Interfaces
p.355
p.355
Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon
p.359
p.359
Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 389-393)
Pages:
343-346
Citation:
Online since:
April 2002
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